ES3B R7 Tech Spezifikatioune
Taiwan Semiconductor Corporation - ES3B R7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - ES3B R7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AB (SMC) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AB, SMC | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 45pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation ES3B R7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | ES3B R7 | ES3B-E3/57T | ES3BB-13 | ES3ABF |
| Hiersteller | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | Yangjie Technology |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Capacitance @ Vr, F. | 45pF @ 4V, 1MHz | 45pF @ 4V, 1MHz | 45pF @ 4V, 1MHz | - |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AA, SMB | - |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Technologie | Standard | Standard | Standard | - |
| Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | SMB | - |
| Reverse Recovery Time (trr) | 35 ns | 30 ns | 25 ns | - |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 3 A | 900 mV @ 3 A | 900 mV @ 3 A | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | - |
Eroflueden ES3B R7 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir ES3B R7 - Taiwan Semiconductor Corporation.
ES3B-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 3A DO214ABES3BB-13Diodes IncorporatedDIODE GEN PURP 100V 3A SMB
ES3B002WF1R1000JAE ElectronicsCONN SSL RCPT 2POS 3.6MM SOLDERES3ABFYangjie TechnologyDiodes - Rectifiers - Single SMBES3890FFESSES3883FESSES3AB-13-FDiodes IncorporatedDIODE GEN PURP 50V 3A SMBES3ABGSHIKUES
ES3C-13-FDiodes IncorporatedDIODE GEN PURP 150V 3A SMCES3A-13-FDiodes IncorporatedDIODE GEN PURP 50V 3A SMCES3890FESS
ES3B-E3/5TElectro-Films (EFI) / Vishay
ES3A R7Taiwan Semiconductor CorporationDIODE GEN PURP 50V 3A DO214ABES3A-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 3A DO214AB
ES3B_NLFairchild (onsemi)ES3BB-13-FDiodes IncorporatedDIODE GEN PURP 100V 3A SMBES3B-13-FDiodes IncorporatedDIODE GEN PURP 100V 3A SMCES3B-13Diodes IncorporatedDIODE GEN PURP 100V 3A SMC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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